MOSFET N-Ch 620V 2.5 Ohm 2.5A SuperMESH 3
Products specifications
| Technology | Si |
| Id - Continuous Drain Current | 2.5 A |
| Vds - Drain-Source Breakdown Voltage | 620 V |
| Transistor Polarity | N-Channel |
| Rds On - Drain-Source Resistance | 3 Ohms |
| Pd - Power Dissipation | 45 W |
| Configuration | Single |
| Tradename | SuperMESH |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Packaging | Tube |
| Vgs - Gate-Source Voltage | 30 V |
| Qg - Gate Charge | 17 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |