STU5N60M2

MOSFETs N-Ch 600V 1.26Ohm typ. 3.7A MDmesh M2
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SKU: STU5N60M2

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MOSFETs N-Ch 600V 1.26Ohm typ. 3.7A MDmesh M2
Lead Time: 0 Days

Products specifications

Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	1.4 Ohms
Id - Continuous Drain Current	3.7 A
Mounting Style	Through Hole
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Vgs th - Gate-Source Threshold Voltage	3 V
Technology	Si
Vds - Drain-Source Breakdown Voltage	650 V
Pd - Power Dissipation	45 W
Configuration	Single
Vgs - Gate-Source Voltage	25 V
Packaging	Tube
Qg - Gate Charge	4.5 nC
Number of Channels	1 Channel
Tradename	MDmesh

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Products specifications

Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	1.4 Ohms
Id - Continuous Drain Current	3.7 A
Mounting Style	Through Hole
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Vgs th - Gate-Source Threshold Voltage	3 V
Technology	Si
Vds - Drain-Source Breakdown Voltage	650 V
Pd - Power Dissipation	45 W
Configuration	Single
Vgs - Gate-Source Voltage	25 V
Packaging	Tube
Qg - Gate Charge	4.5 nC
Number of Channels	1 Channel
Tradename	MDmesh