MOSFETs N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a TO-247 packag
Lead Time: 112 Days
Products specifications
| Configuration | Single |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Rds On - Drain-Source Resistance | 260 mOhms |
| Channel Mode | Enhancement |
| Vgs - Gate-Source Voltage | 25 V |
| Qg - Gate Charge | 20 nC |
| Id - Continuous Drain Current | 12 A |
| Transistor Polarity | N-Channel |
| Technology | Si |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 55 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Pd - Power Dissipation | 90 W |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Tradename | MDmesh |