MOSFETs N-Ch 650V 0.198 Ohm 15A MDmesh FET
Lead Time: 112 Days
Products specifications
| Qg - Gate Charge | 31 nC |
| Tradename | MDmesh |
| Packaging | Tube |
| Technology | Si |
| Vgs th - Gate-Source Threshold Voltage | 5 V |
| Number of Channels | 1 Channel |
| Mounting Style | Through Hole |
| Pd - Power Dissipation | 110 W |
| Rds On - Drain-Source Resistance | 220 mOhms |
| Id - Continuous Drain Current | 9.4 A |
| Transistor Polarity | N-Channel |
| Vgs - Gate-Source Voltage | 25 V |
| Configuration | Single |
| Vds - Drain-Source Breakdown Voltage | 650 V |