STW19NM60N

MOSFETs N-Ch 600 V 0.27 Ohm 13 A MDmesh(TM)

SKU: STW19NM60N

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Quantity

600+

Price

R 38.96

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MOSFETs N-Ch 600 V 0.27 Ohm 13 A MDmesh(TM)

Products specifications

Transistor Polarity	N-Channel
Number of Channels	1 Channel
Qg - Gate Charge	35 nC
Mounting Style	Through Hole
Pd - Power Dissipation	110 W
Vds - Drain-Source Breakdown Voltage	600 V
Rds On - Drain-Source Resistance	260 mOhms
Qualification	AEC-Q101
Vgs th - Gate-Source Threshold Voltage	3 V
Tradename	MDmesh
Vgs - Gate-Source Voltage	25 V
Packaging	Tube
Technology	Si
Configuration	Single
Id - Continuous Drain Current	13 A
Channel Mode	Enhancement
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C

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Products specifications

Transistor Polarity	N-Channel
Number of Channels	1 Channel
Qg - Gate Charge	35 nC
Mounting Style	Through Hole
Pd - Power Dissipation	110 W
Vds - Drain-Source Breakdown Voltage	600 V
Rds On - Drain-Source Resistance	260 mOhms
Qualification	AEC-Q101
Vgs th - Gate-Source Threshold Voltage	3 V
Tradename	MDmesh
Vgs - Gate-Source Voltage	25 V
Packaging	Tube
Technology	Si
Configuration	Single
Id - Continuous Drain Current	13 A
Channel Mode	Enhancement
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C