STW28NM60ND

MOSFETs N-chanel 600 V 0.120 Ohm typ 24 A
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SKU: STW28NM60ND

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R 114.58

R 83.56

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MOSFETs N-chanel 600 V 0.120 Ohm typ 24 A
Lead Time: 0 Days

Products specifications

Number of Channels	1 Channel
Technology	Si
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	150 mOhms
Configuration	Single
Vds - Drain-Source Breakdown Voltage	650 V
Pd - Power Dissipation	190 W
Vgs - Gate-Source Voltage	25 V
Id - Continuous Drain Current	23 A
Mounting Style	Through Hole
Packaging	Tube
Qg - Gate Charge	62.5 nC
Vgs th - Gate-Source Threshold Voltage	4 V

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Products specifications

Number of Channels	1 Channel
Technology	Si
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	150 mOhms
Configuration	Single
Vds - Drain-Source Breakdown Voltage	650 V
Pd - Power Dissipation	190 W
Vgs - Gate-Source Voltage	25 V
Id - Continuous Drain Current	23 A
Mounting Style	Through Hole
Packaging	Tube
Qg - Gate Charge	62.5 nC
Vgs th - Gate-Source Threshold Voltage	4 V