MOSFETs Auto-grade N-CH 600V 0.097Ohm typ 29A
Lead Time: 0 Days
Products specifications
| Pd - Power Dissipation | 190 W |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Rds On - Drain-Source Resistance | 110 mOhms |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 55 C |
| Vgs - Gate-Source Voltage | 25 V |
| Number of Channels | 1 Channel |
| Packaging | Tube |
| Mounting Style | Through Hole |
| Id - Continuous Drain Current | 29 A |
| Qualification | AEC-Q101 |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Qg - Gate Charge | 80.4 nC |
| Configuration | Single |
| Vds - Drain-Source Breakdown Voltage | 650 V |