MOSFETs Automotive-grade N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET i
Lead Time: 112 Days
Products specifications
| Mounting Style | Through Hole |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Pd - Power Dissipation | 250 W |
| Qg - Gate Charge | 56 nC |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Qualification | AEC-Q101 |
| Minimum Operating Temperature | - 55 C |
| Tradename | MDmesh |
| Vgs - Gate-Source Voltage | 25 V |
| Channel Mode | Enhancement |
| Maximum Operating Temperature | + 150 C |
| Id - Continuous Drain Current | 34 A |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Rds On - Drain-Source Resistance | 93 mOhms |
| Technology | Si |
| Number of Channels | 1 Channel |