MOSFETs N-channel 600 V, 0.085 Ohm typ., 30 A MDmesh DM6 Power MOSFET in a TO-247 packag
Lead Time: 112 Days
Products specifications
| Qg - Gate Charge | 44 nC |
| Channel Mode | Enhancement |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Mounting Style | Through Hole |
| Rds On - Drain-Source Resistance | 99 mOhms |
| Technology | Si |
| Vgs - Gate-Source Voltage | 25 V |
| Vgs th - Gate-Source Threshold Voltage | 3.25 V |
| Pd - Power Dissipation | 210 W |
| Minimum Operating Temperature | - 55 C |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Number of Channels | 1 Channel |
| Id - Continuous Drain Current | 30 A |
| Transistor Polarity | N-Channel |
| Tradename | MDmesh |