MOSFET N-Ch 500V 0.035 Ohm 68A MDmesh II FET
Products specifications
| Technology | Si |
| Pd - Power Dissipation | 446 W |
| Tradename | MDmesh |
| Configuration | Single |
| Vds - Drain-Source Breakdown Voltage | 500 V |
| Rds On - Drain-Source Resistance | 43 mOhms |
| Packaging | Tube |
| Mounting Style | Through Hole |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Vgs - Gate-Source Voltage | 25 V |
| Id - Continuous Drain Current | 43 A |
| Qg - Gate Charge | 178 nC |