MOSFETs N-CH 650V 0.037Ohm 58A
Products specifications
| Mounting Style | Through Hole |
| Transistor Polarity | N-Channel |
| Pd - Power Dissipation | 330 W |
| Tradename | MDmesh |
| Number of Channels | 1 Channel |
| Qg - Gate Charge | 143 nC |
| Vds - Drain-Source Breakdown Voltage | 710 V |
| Rds On - Drain-Source Resistance | 37 mOhms |
| Technology | Si |
| Maximum Operating Temperature | + 150 C |
| Configuration | Single |
| Minimum Operating Temperature | - 55 C |
| Id - Continuous Drain Current | 58 A |
| Vgs - Gate-Source Voltage | 25 V |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Packaging | Tube |