MOSFETs Automotive-grade N-channel 600 V, 37 mOhm typ., 66 A MDmesh DM2 Power MOSFET in
Lead Time: 112 Days
Products specifications
| Id - Continuous Drain Current | 66 A |
| Mounting Style | Through Hole |
| Configuration | Single |
| Rds On - Drain-Source Resistance | 42 mOhms |
| Transistor Polarity | N-Channel |
| Tradename | MDmesh |
| Qg - Gate Charge | 121 nC |
| Number of Channels | 1 Channel |
| Pd - Power Dissipation | 446 W |
| Vgs - Gate-Source Voltage | 25 V |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Qualification | AEC-Q101 |
| Technology | Si |
| Vgs th - Gate-Source Threshold Voltage | 4 V |