VNP10N06-E

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MOSFET N-Ch 60V 10A OmniFET

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MOSFET N-Ch 60V 10A OmniFET

Products specifications

Vgs - Gate-Source Voltage	20 V
Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	10 A
Packaging	Tube
Rds On - Drain-Source Resistance	150 mOhms
Qualification	AEC-Q101
Mounting Style	Through Hole
Technology	Si
Pd - Power Dissipation	42 W
Transistor Polarity	N-Channel

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Products specifications

Vgs - Gate-Source Voltage	20 V
Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	10 A
Packaging	Tube
Rds On - Drain-Source Resistance	150 mOhms
Qualification	AEC-Q101
Mounting Style	Through Hole
Technology	Si
Pd - Power Dissipation	42 W
Transistor Polarity	N-Channel