2N5550TFR

Bipolar Transistors - BJT NPN Si Transistor Epitaxial
Lead Time: 77 Days

SKU: 2N5550TFR

Availability: 6397 in stock

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Bipolar Transistors - BJT NPN Si Transistor Epitaxial
Lead Time: 175 Days

Products specifications

Collector- Base Voltage VCBO	160 V
Maximum DC Collector Current	0.6 A
Maximum Operating Temperature	+ 150 C
Transistor Polarity	NPN
Series	2N5550
Mounting Style	Through Hole
Minimum Operating Temperature	- 55 C
Collector- Emitter Voltage VCEO Max	140 V
Collector-Emitter Saturation Voltage	0.25 V
Configuration	Single
Emitter- Base Voltage VEBO	6 V
Gain Bandwidth Product fT	300 MHz

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Products specifications

Collector- Base Voltage VCBO	160 V
Maximum DC Collector Current	0.6 A
Maximum Operating Temperature	+ 150 C
Transistor Polarity	NPN
Series	2N5550
Mounting Style	Through Hole
Minimum Operating Temperature	- 55 C
Collector- Emitter Voltage VCEO Max	140 V
Collector-Emitter Saturation Voltage	0.25 V
Configuration	Single
Emitter- Base Voltage VEBO	6 V
Gain Bandwidth Product fT	300 MHz