Bipolar Transistors - BJT NPN Si Transistor Epitaxial
Lead Time: 0 Days
Products specifications
| Collector-Emitter Saturation Voltage | 1 V |
| Configuration | Single |
| Collector- Base Voltage VCBO | 350 V |
| Emitter- Base Voltage VEBO | 6 V |
| Maximum DC Collector Current | 0.5 A |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 55 C |
| Series | 2N6517 |
| Gain Bandwidth Product fT | 200 MHz |
| Transistor Polarity | NPN |
| Mounting Style | Through Hole |
| Collector- Emitter Voltage VCEO Max | 350 V |