MOSFETs N-Chan Enhancement Mode Field Effect
Lead Time: 294 Days
Products specifications
|
Technology
|
Si |
|
Configuration
|
Dual |
|
Transistor Polarity
|
N-Channel |
|
Pd - Power Dissipation
|
200 mW |
|
Rds On - Drain-Source Resistance
|
7.5 Ohms |
|
Vgs - Gate-Source Voltage
|
20 V |
|
Packaging
|
Cut Tape, MouseReel, Reel |
|
Minimum Operating Temperature
|
- 55 C |
|
Number of Channels
|
2 Channel |
|
Vds - Drain-Source Breakdown Voltage
|
60 V |
|
Channel Mode
|
Enhancement |
|
Id - Continuous Drain Current
|
115 mA |
|
Maximum Operating Temperature
|
+ 150 C |