MOSFETs N-Chan Enhancement Mode Field Effect
Lead Time: 168 Days
Products specifications
| Technology | Si |
| Configuration | Dual |
| Transistor Polarity | N-Channel |
| Pd - Power Dissipation | 200 mW |
| Rds On - Drain-Source Resistance | 7.5 Ohms |
| Vgs - Gate-Source Voltage | 20 V |
| Packaging | Cut Tape, MouseReel, Reel |
| Minimum Operating Temperature | - 55 C |
| Number of Channels | 2 Channel |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Channel Mode | Enhancement |
| Id - Continuous Drain Current | 115 mA |
| Maximum Operating Temperature | + 150 C |