MOSFET 60V, 300mA N-Chan
Lead Time: 175 Days
Products specifications
Vds - Drain-Source Breakdown Voltage | 60 V |
Vgs - Gate-Source Voltage | 20 V |
Technology | Si |
Pd - Power Dissipation | 350 mW |
Rds On - Drain-Source Resistance | 2 Ohms |
Transistor Polarity | N-Channel |
Packaging | Cut Tape, MouseReel, Reel |
Number of Channels | 1 Channel |
Id - Continuous Drain Current | 300 mA |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Channel Mode | Enhancement |
Configuration | Single |