Bipolar Transistors - BJT NPN Epitaxial Sil
Products specifications
| Emitter- Base Voltage VEBO | 6 V |
| Transistor Polarity | NPN |
| Collector-Emitter Saturation Voltage | 1 V |
| Collector- Emitter Voltage VCEO Max | 200 V |
| Mounting Style | Through Hole |
| Configuration | Single |
| Gain Bandwidth Product fT | 10 MHz |
| Collector- Base Voltage VCBO | 400 V |
| Maximum DC Collector Current | 7 A |
| Series | BU406 |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 55 C |