FGA4060ADF

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IGBT Transistors 650V FS Gen3 Trench IGBT proliferation

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IGBT Transistors 650V FS Gen3 Trench IGBT proliferation

Products specifications

Technology	Si
Collector- Emitter Voltage VCEO Max	600 V
Minimum Operating Temperature	- 55 C
Series	FGA4060ADF
Mounting Style	Through Hole
Collector-Emitter Saturation Voltage	1.8 V
Continuous Collector Current at 25 C	80 A
Pd - Power Dissipation	238 W
Maximum Operating Temperature	+ 175 C
Packaging	Tube
Configuration	Single
Maximum Gate Emitter Voltage	30 V

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Products specifications

Technology	Si
Collector- Emitter Voltage VCEO Max	600 V
Minimum Operating Temperature	- 55 C
Series	FGA4060ADF
Mounting Style	Through Hole
Collector-Emitter Saturation Voltage	1.8 V
Continuous Collector Current at 25 C	80 A
Pd - Power Dissipation	238 W
Maximum Operating Temperature	+ 175 C
Packaging	Tube
Configuration	Single
Maximum Gate Emitter Voltage	30 V