FGA50S110P

IGBTs 1100 V, 50 A Shorted-anode IGBT
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SKU: FGA50S110P

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IGBTs 1100 V, 50 A Shorted-anode IGBT
Lead Time: 0 Days

Products specifications

Pd - Power Dissipation	300 W
Packaging	Tube
Series	FGA50S110P
Technology	Si
Minimum Operating Temperature	- 55 C
Maximum Gate Emitter Voltage	25 V
Continuous Collector Current at 25 C	50 A
Maximum Operating Temperature	+ 175 C
Collector- Emitter Voltage VCEO Max	1100 V
Collector-Emitter Saturation Voltage	2.7 V
Mounting Style	Through Hole

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Products specifications

Pd - Power Dissipation	300 W
Packaging	Tube
Series	FGA50S110P
Technology	Si
Minimum Operating Temperature	- 55 C
Maximum Gate Emitter Voltage	25 V
Continuous Collector Current at 25 C	50 A
Maximum Operating Temperature	+ 175 C
Collector- Emitter Voltage VCEO Max	1100 V
Collector-Emitter Saturation Voltage	2.7 V
Mounting Style	Through Hole