IGBT Transistors FS3TIGBT TO3PN 50A 650V
Products specifications
| Minimum Operating Temperature | - 55 C |
| Mounting Style | Through Hole |
| Packaging | Tube |
| Maximum Operating Temperature | + 175 C |
| Maximum Gate Emitter Voltage | 30 V |
| Pd - Power Dissipation | 319 W |
| Continuous Collector Current at 25 C | 100 A |
| Series | FGA50T65SHD |
| Collector-Emitter Saturation Voltage | 2.14 V |
| Technology | Si |
| Collector- Emitter Voltage VCEO Max | 650 V |