IGBT Transistors 650V FS Gen3 Trench IGBT
Products specifications
| Mounting Style | Through Hole |
| Pd - Power Dissipation | 306 W |
| Collector-Emitter Saturation Voltage | 1.8 V |
| Series | FGA6065ADF |
| Packaging | Tube |
| Collector- Emitter Voltage VCEO Max | 650 V |
| Minimum Operating Temperature | - 55 C |
| Configuration | Single |
| Continuous Collector Current at 25 C | 120 A |
| Maximum Operating Temperature | + 175 C |
| Technology | Si |