FGAF20N60SMD

IGBT Transistors 600 V 40 A 62.5 W
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SKU: FGAF20N60SMD

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IGBT Transistors 600 V 40 A 62.5 W
Lead Time: 0 Days

Products specifications

Collector- Emitter Voltage VCEO Max	600 V
Mounting Style	Through Hole
Maximum Gate Emitter Voltage	20 V
Collector-Emitter Saturation Voltage	1.9 V
Technology	Si
Continuous Collector Current at 25 C	40 A
Minimum Operating Temperature	- 55 C
Series	FGAF20N60SMD
Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	62.5 W
Packaging	Tube

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Products specifications

Collector- Emitter Voltage VCEO Max	600 V
Mounting Style	Through Hole
Maximum Gate Emitter Voltage	20 V
Collector-Emitter Saturation Voltage	1.9 V
Technology	Si
Continuous Collector Current at 25 C	40 A
Minimum Operating Temperature	- 55 C
Series	FGAF20N60SMD
Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	62.5 W
Packaging	Tube