IGBT Transistors Ultrafast
Products specifications
| Technology | Si |
| Series | FGAF40N60UFD |
| Mounting Style | Through Hole |
| Packaging | Tube |
| Collector- Emitter Voltage VCEO Max | 600 V |
| Configuration | Single |
| Pd - Power Dissipation | 100 W |
| Continuous Collector Current at 25 C | 40 A |
| Collector-Emitter Saturation Voltage | 3.1 V |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 55 C |