IGBT Transistors 650 V 80 A 268 W
Products specifications
| Maximum Operating Temperature | + 175 C |
| Packaging | Tube |
| Collector- Emitter Voltage VCEO Max | 650 V |
| Technology | Si |
| Mounting Style | Through Hole |
| Minimum Operating Temperature | - 55 C |
| Continuous Collector Current at 25 C | 80 A |
| Series | FGH40T65UPD |
| Collector-Emitter Saturation Voltage | 2.1 V |
| Pd - Power Dissipation | 268 W |
| Maximum Gate Emitter Voltage | 20 V |