IGBT Transistors 300V PT N-Channel
Lead Time: 0 Days
Products specifications
| Mounting Style | Through Hole |
| Series | FGH50N3 |
| Pd - Power Dissipation | 463 W |
| Collector-Emitter Saturation Voltage | 1.3 V |
| Technology | Si |
| Configuration | Single |
| Continuous Collector Current at 25 C | 75 A |
| Maximum Operating Temperature | + 150 C |
| Packaging | Tube |
| Minimum Operating Temperature | - 55 C |
| Collector- Emitter Voltage VCEO Max | 300 V |