IGBT Transistors HIGH POWER
Products specifications
| Collector-Emitter Saturation Voltage | 1.5 V |
| Collector- Emitter Voltage VCEO Max | 1000 V |
| Maximum Operating Temperature | + 150 C |
| Packaging | Tube |
| Series | FGL60N100BNTD |
| Minimum Operating Temperature | - 55 C |
| Configuration | Single |
| Mounting Style | Through Hole |
| Continuous Collector Current at 25 C | 60 A |
| Technology | Si |
| Pd - Power Dissipation | 180 W |