FJN3303RTA

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Bipolar Transistors - Pre-Biased NPN Si Transistor Epitaxial

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Bipolar Transistors - Pre-Biased NPN Si Transistor Epitaxial

Products specifications

Continuous Collector Current	0.1 A
Peak DC Collector Current	100 mA
Pd - Power Dissipation	300 mW
Maximum Operating Temperature	+ 150 C
Collector- Emitter Voltage VCEO Max	50 V
Mounting Style	Through Hole
Minimum Operating Temperature	- 55 C
Series	FJN3303R
Packaging	Ammo Pack
Transistor Polarity	NPN
Configuration	Single
Typical Input Resistor	22 kOhms
Typical Resistor Ratio	1

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Products specifications

Continuous Collector Current	0.1 A
Peak DC Collector Current	100 mA
Pd - Power Dissipation	300 mW
Maximum Operating Temperature	+ 150 C
Collector- Emitter Voltage VCEO Max	50 V
Mounting Style	Through Hole
Minimum Operating Temperature	- 55 C
Series	FJN3303R
Packaging	Ammo Pack
Transistor Polarity	NPN
Configuration	Single
Typical Input Resistor	22 kOhms
Typical Resistor Ratio	1