Bipolar Transistors - BJT PNP Epitaxial Sil
Products specifications
| Emitter- Base Voltage VEBO | - 5 V |
| Configuration | Single |
| Collector- Base Voltage VCBO | - 35 V |
| Collector-Emitter Saturation Voltage | - 0.1 V |
| Collector- Emitter Voltage VCEO Max | - 30 V |
| Maximum DC Collector Current | 0.5 A |
| Minimum Operating Temperature | - 55 C |
| Gain Bandwidth Product fT | 200 MHz |
| Series | FJX1182 |
| Maximum Operating Temperature | + 150 C |
| Transistor Polarity | PNP |