IGBT Modules High Power Module
Products specifications
| Collector- Emitter Voltage VCEO Max | 650 V |
| Gate-Emitter Leakage Current | 2 uA |
| Packaging | Tray |
| Collector-Emitter Saturation Voltage | 1.55 V |
| Continuous Collector Current at 25 C | 40 A |
| Minimum Operating Temperature | - 40 C |
| Maximum Operating Temperature | + 150 C |
| Product | IGBT Silicon Modules |
| Configuration | Triple |
| Pd - Power Dissipation | 156 W |