HGTG10N120BND

IGBT Transistors 35A 1200V N-Ch
Lead Time: 64 Days

SKU: HGTG10N120BND

Availability: 195 in stock

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IGBT Transistors 35A 1200V N-Ch
Lead Time: 64 Days

Products specifications

Configuration	Single
Technology	Si
Pd - Power Dissipation	298 W
Packaging	Tube
Collector-Emitter Saturation Voltage	2.45 V
Continuous Collector Current at 25 C	17 A
Collector- Emitter Voltage VCEO Max	1200 V
Mounting Style	Through Hole
Series	HGTG10N120BND
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C

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Products specifications

Configuration	Single
Technology	Si
Pd - Power Dissipation	298 W
Packaging	Tube
Collector-Emitter Saturation Voltage	2.45 V
Continuous Collector Current at 25 C	17 A
Collector- Emitter Voltage VCEO Max	1200 V
Mounting Style	Through Hole
Series	HGTG10N120BND
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C