HGTG18N120BND

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IGBT Transistors 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde

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IGBT Transistors 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde

Products specifications

Technology	Si
Series	HGTG18N120BND
Packaging	Tube
Mounting Style	Through Hole
Collector-Emitter Saturation Voltage	2.45 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	390 W
Collector- Emitter Voltage VCEO Max	1200 V
Configuration	Single
Continuous Collector Current at 25 C	54 A

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Products specifications

Technology	Si
Series	HGTG18N120BND
Packaging	Tube
Mounting Style	Through Hole
Collector-Emitter Saturation Voltage	2.45 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	390 W
Collector- Emitter Voltage VCEO Max	1200 V
Configuration	Single
Continuous Collector Current at 25 C	54 A