IGBT Transistors 600V IGBT UFS N-Channel
Lead Time: 364 Days
Products specifications
| Configuration | Single |
| Packaging | Tube |
| Technology | Si |
| Series | HGTG20N60B3 |
| Maximum Operating Temperature | + 150 C |
| Collector-Emitter Saturation Voltage | 1.8 V |
| Mounting Style | Through Hole |
| Pd - Power Dissipation | 165 W |
| Collector- Emitter Voltage VCEO Max | 600 V |
| Continuous Collector Current at 25 C | 40 A |
| Minimum Operating Temperature | - 40 C |