HGTG30N60B3D

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IGBT Transistors 600V IGBT UFS N-Channel

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IGBT Transistors 600V IGBT UFS N-Channel

Products specifications

Series	HGTG30N60B3D
Mounting Style	Through Hole
Packaging	Tube
Collector-Emitter Saturation Voltage	1.45 V
Technology	Si
Continuous Collector Current at 25 C	60 A
Collector- Emitter Voltage VCEO Max	600 V
Configuration	Single
Pd - Power Dissipation	208 W
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C

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Products specifications

Series	HGTG30N60B3D
Mounting Style	Through Hole
Packaging	Tube
Collector-Emitter Saturation Voltage	1.45 V
Technology	Si
Continuous Collector Current at 25 C	60 A
Collector- Emitter Voltage VCEO Max	600 V
Configuration	Single
Pd - Power Dissipation	208 W
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C