HGTP12N60C3D

IGBT Transistors HGTP12N60C3D
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SKU: HGTP12N60C3D

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R 116.37

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IGBT Transistors HGTP12N60C3D
Lead Time: 0 Days

Products specifications

Mounting Style	Through Hole
Series	HGTP12N60C3D
Minimum Operating Temperature	- 40 C
Technology	Si
Packaging	Tube
Collector-Emitter Saturation Voltage	1.65 V
Continuous Collector Current at 25 C	24 A
Collector- Emitter Voltage VCEO Max	600 V
Maximum Operating Temperature	+ 150 C
Configuration	Single
Pd - Power Dissipation	104 W

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Products specifications

Mounting Style	Through Hole
Series	HGTP12N60C3D
Minimum Operating Temperature	- 40 C
Technology	Si
Packaging	Tube
Collector-Emitter Saturation Voltage	1.65 V
Continuous Collector Current at 25 C	24 A
Collector- Emitter Voltage VCEO Max	600 V
Maximum Operating Temperature	+ 150 C
Configuration	Single
Pd - Power Dissipation	104 W