Bipolar Transistors - BJT NPN Epitaxial Sil
Products specifications
| Collector-Emitter Saturation Voltage | 0.2 V |
| Minimum Operating Temperature | - 55 C |
| Maximum DC Collector Current | 0.7 A |
| Collector- Base Voltage VCBO | 80 V |
| Mounting Style | Through Hole |
| Transistor Polarity | NPN |
| Maximum Operating Temperature | + 150 C |
| Series | KSC1008 |
| Gain Bandwidth Product fT | 50 MHz |
| Collector- Emitter Voltage VCEO Max | 60 V |
| Configuration | Single |
| Emitter- Base Voltage VEBO | 8 V |