Bipolar Transistors - BJT NPN Triple Diffused Planar Silicon
Lead Time: 0 Days
Products specifications
| Collector-Emitter Saturation Voltage | 0.35 V |
| Gain Bandwidth Product fT | 11 MHz |
| Configuration | Single |
| Collector- Emitter Voltage VCEO Max | 450 V |
| Transistor Polarity | NPN |
| Collector- Base Voltage VCBO | 1 kV |
| Series | KSC5338D |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Emitter- Base Voltage VEBO | 12 V |
| Mounting Style | Through Hole |
| Maximum DC Collector Current | 5 A |