KSC5502DTTU

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Bipolar Transistors - BJT NPN Trip Dif Planar Silicon Transistor

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Bipolar Transistors - BJT NPN Trip Dif Planar Silicon Transistor

Products specifications

Transistor Polarity	NPN
Minimum Operating Temperature	- 65 C
Emitter- Base Voltage VEBO	12 V
Configuration	Single
Series	KSC5502DT
Mounting Style	Through Hole
Collector- Base Voltage VCBO	1.2 kV
Maximum Operating Temperature	+ 150 C
Collector- Emitter Voltage VCEO Max	600 V
Maximum DC Collector Current	2 A
Gain Bandwidth Product fT	11 MHz

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Products specifications

Transistor Polarity	NPN
Minimum Operating Temperature	- 65 C
Emitter- Base Voltage VEBO	12 V
Configuration	Single
Series	KSC5502DT
Mounting Style	Through Hole
Collector- Base Voltage VCBO	1.2 kV
Maximum Operating Temperature	+ 150 C
Collector- Emitter Voltage VCEO Max	600 V
Maximum DC Collector Current	2 A
Gain Bandwidth Product fT	11 MHz