Bipolar Transistors - BJT NPN Epitaxial Transistor
Products specifications
| Collector-Emitter Saturation Voltage | 0.15 V |
| Gain Bandwidth Product fT | 200 MHz |
| Configuration | Single |
| Transistor Polarity | NPN |
| Collector- Emitter Voltage VCEO Max | 45 V |
| Maximum DC Collector Current | 0.2 A |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 55 C |
| Collector- Base Voltage VCBO | 60 V |
| Emitter- Base Voltage VEBO | 5 V |
| Series | KSC815 |
| Mounting Style | Through Hole |