Bipolar Transistors - BJT NPN Epitaxial Sil
Products specifications
| Gain Bandwidth Product fT | 10 MHz |
| Maximum DC Collector Current | 6 A |
| Emitter- Base Voltage VEBO | 8 V |
| Collector- Base Voltage VCBO | 300 V |
| Maximum Operating Temperature | + 150 C |
| Configuration | Single |
| Series | KSD363 |
| Minimum Operating Temperature | - 55 C |
| Collector- Emitter Voltage VCEO Max | 120 V |
| Mounting Style | Through Hole |
| Transistor Polarity | NPN |