Bipolar Transistors - BJT NPN Epitaxial Sil
Lead Time: 0 Days
Products specifications
| Collector-Emitter Saturation Voltage | 0.45 V |
| Gain Bandwidth Product fT | 8 MHz |
| Minimum Operating Temperature | - 55 C |
| Configuration | Single |
| Emitter- Base Voltage VEBO | 5 V |
| Mounting Style | Through Hole |
| Transistor Polarity | NPN |
| Collector- Emitter Voltage VCEO Max | 80 V |
| Collector- Base Voltage VCBO | 80 V |
| Maximum Operating Temperature | + 150 C |
| Series | KSD526 |
| Maximum DC Collector Current | 4 A |