Bipolar Transistors - BJT NPN Epitaxial Sil
Products specifications
| Emitter- Base Voltage VEBO | 8 V |
| Series | KSH200 |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Collector-Emitter Saturation Voltage | 1.8 V |
| Maximum DC Collector Current | 5 A |
| Gain Bandwidth Product fT | 65 MHz |
| Collector- Emitter Voltage VCEO Max | 25 V |
| Collector- Base Voltage VCBO | 40 V |
| Transistor Polarity | NPN |
| Configuration | Single |