Bipolar Transistors - BJT NPN Si Transistor Epitaxial
Products specifications
| Emitter- Base Voltage VEBO | 4 V |
| Collector-Emitter Saturation Voltage | 0.25 V |
| Mounting Style | Through Hole |
| Collector- Emitter Voltage VCEO Max | 80 V |
| Series | KSP06 |
| Gain Bandwidth Product fT | 100 MHz |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Configuration | Single |
| Collector- Base Voltage VCBO | 80 V |
| Maximum DC Collector Current | 0.5 A |
| Transistor Polarity | NPN |