Bipolar Transistors - BJT NPN Si Transistor Epitaxial
Lead Time: 84 Days
Products specifications
| Collector- Emitter Voltage VCEO Max | 25 V |
| Collector-Emitter Saturation Voltage | 0.5 V |
| Emitter- Base Voltage VEBO | 3 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 650 MHz |
| Collector- Base Voltage VCBO | 30 V |
| Series | KST10 |
| Transistor Polarity | NPN |