Bipolar Transistors - BJT NPN Si Transistor Epitaxial
Products specifications
| Collector- Emitter Voltage VCEO Max | 200 V |
| Gain Bandwidth Product fT | 50 MHz |
| Collector-Emitter Saturation Voltage | 0.5 V |
| Configuration | Single |
| Collector- Base Voltage VCBO | 200 V |
| Maximum DC Collector Current | 0.5 A |
| Series | KST43 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 6 V |
| Maximum Operating Temperature | + 150 C |