Bipolar Transistors - BJT PNP Si Transistor Epitaxial
Products specifications
| Gain Bandwidth Product fT | 65 MHz |
| Collector- Base Voltage VCBO | 40 V |
| Maximum DC Collector Current | 5 A |
| Collector- Emitter Voltage VCEO Max | 25 V |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 65 C |
| Transistor Polarity | PNP |
| Configuration | Single |
| Series | MJD210 |
| Emitter- Base Voltage VEBO | - 8 V |