Bipolar Transistors - BJT NPN Epitaxial Sil
Products specifications
| Configuration | Single |
| Collector-Emitter Saturation Voltage | 1.7 V |
| Collector- Base Voltage VCBO | 100 V |
| Gain Bandwidth Product fT | 50 MHz |
| Series | MJE182 |
| Collector- Emitter Voltage VCEO Max | 80 V |
| Maximum Operating Temperature | + 150 C |
| Maximum DC Collector Current | 3 A |
| Minimum Operating Temperature | - 65 C |
| Emitter- Base Voltage VEBO | 7 V |
| Mounting Style | Through Hole |
| Transistor Polarity | NPN |