Phototransistors Phototransistor Si Infrared
Lead Time: 105 Days
Products specifications
| Rise Time | 15 us |
| Collector- Emitter Voltage VCEO Max | 30 V |
| Peak Wavelength | 940 nm |
| Series | QSB363 |
| Pd - Power Dissipation | 75 mW |
| Maximum Operating Temperature | + 85 C |
| Operating Supply Voltage | 5 V |
| Minimum Operating Temperature | - 25 C |
| Fall Time | 15 us |
| Dark Current | 100 nA |