Bipolar Transistors - BJT NPN Medium Power
Lead Time: 168 Days
Products specifications
| Manufacturer | Diodes Incorporated |
| Product Category | Bipolar Transistors - BJT |
| RoHS | Details |
| Mounting Style | SMD/SMT |
| Package/Case | SOT-89-3 |
| Collector- Emitter Voltage VCEO Max | 40 V, 60 V |
| Collector- Base Voltage VCBO | 40 V, 80 V |
| Pd - Power Dissipation | 1 W |
| Packaging | Cut Tape, MouseReel, Reel |
| DC Current Gain hFE Max | 300 at 1 mA, 5 V |
| Height | 1.5 mm |
| Length | 4.5 mm |
| Technology | Si |
| Width | 2.5 mm |
| Brand | Diodes Incorporated |
| Continuous Collector Current | 1 A |
| DC Collector/Base Gain hFE Min | 300 at 1 mA, 5 V, 300 at 500 mA, 5 V, 200 at 1 A, 5 V, 35 at 2 A, 5 V |
| Product Type | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 1000 |
| Subcategory | Transistors |
| Unit Weight | 52 mg |
| Maximum DC Collector Current | 1 A |
| Minimum Operating Temperature | - 65 C |
| Series | FCX49 |
| Transistor Polarity | NPN |
| Maximum Operating Temperature | + 150 C |
| Collector-Emitter Saturation Voltage | 0.5 V |
| Gain Bandwidth Product fT | 150 MHz |
| Configuration | Single |
| Emitter- Base Voltage VEBO | 5 V |