MOSFETs N-Chnl 60V
Lead Time: 84 Days
Products specifications
| Channel Mode | Enhancement |
| Technology | Si |
| Pd - Power Dissipation | 3 W |
| Id - Continuous Drain Current | 2.1 A |
| Rds On - Drain-Source Resistance | 330 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 1.3 V |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vgs - Gate-Source Voltage | 10 V |
| Packaging | Cut Tape, MouseReel, Reel |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |